Si(111)和Si(100)衬底上AlN薄膜的激光分子束外延生长特征

Laser Molecular Beam Epitaxial Growth Characteristics of AlN Thin Film Prepared on Si(111) and Si(100) Substrates

采用激光分子束外延技术在Si(111)和Si(100)衬底上制备了AlN薄膜,研究了衬底温度和激光能量对薄膜物相结构和形貌的影响。结果表明:低的激光能量和高的衬底温度有益于薄膜的取向度和表面质量;激光能量为100mJ时,Si(111)衬底上的AlN薄膜呈单一的h-AlN(002)取向,Si(100)衬底上的薄膜在600℃时出现小的h-AlN(100)衍射峰,在700℃时呈微弱的h-AlN(002)取向;在Si(111)衬底上更易生长出取向度高的AlN薄膜。

AlN thin film was prepared on Si（111） and Si（100） substrates by laser molecular beam epitaxy technique, and the effects of substrate temperature and laser energy on phase structure and morphology of the film were studied. The results show that the low laser energy and high substrate temperature were beneficial to orientation degree and surface quality of the film. AlN film on Si （111） substrate showed the single preferred orientation of h-AaN（002） when laser energy was 100 mJ. The film on Si（100） exhibited small diffraction peak of h- A1N（100） at 600 ℃ ,and presented weak preferred oritation of h-AlN（002） at 700℃. It was easy to grow the A1N film with high orientation degree on Si（111） substrate.