GaN基倒装焊LED芯片的热学特性模拟与分析

Simulation and Analysis of Thermal Property of GaN-based Flip-chip Light-emitting Diodes

采用有限元方法建立了GaN基倒装LED芯片的三维热学模型,并对其温度分布进行模拟,比较了在不同凸点(焊点)分布、不同粘结层材料与厚度、不同蓝宝石衬底厚度及蓝宝石图形化下的倒装芯片温度分布,研究了粘结层空洞对倒装芯片热学特性的影响,并根据芯片传热模型对模拟结果进行了分析。

A three-dimensional thermal model was developed to help study the thermal properties of chip-level GaN-based flip-chip light-emitting diodes （LEDs） with finite-element method. The temperature distributions in different bump configurations, different thickness and materials of adhesive layer, different thicknesses of the sapphire substrate and different sapphire roughening surfaces were simulated and compared. Effect of adhesive cavity on thermal property of the flip-chip LEDs was studied. A heat transfer model was built to explain the results.