GNRFET双极特性及工作区域研究

Study on Bipolar Characteristics and Operation Regions of GNRFETs

石墨烯器件作为下一代纳米电子器件的有力竞争者受到广泛关注,但对其器件工作机理的研究尚不透彻。对石墨烯纳米带场效应晶体管(graphene nanoribbon field effect transistor,GNRFET)的双极特性进行了研究,分析了偏置电压对GNRFET转移特性和输出特性的影响,发现除已被关注到的栅电压外,源漏电压对GNRFET的双极特性亦有作用,并将两者综合考虑才能全面反映GNRFET的工作状态。在此基础上,进一步提出了工作区域的概念,将GNR-FET的工作区域划分为空穴导电区、电子导电区、转变区和截止区,为GNRFET器件的应用和电路设计提供指导。

As an excellent candidate of next generation nano-electronic devices, graphene devices are attracted intensive interest. However, many researches about the mechanism of graphene de- vices remain unclear. Bipolar characteristic of the graphene nanoribbon field effect transistor （GNRFET） was researched, and the influence of the bias voltage on the transfer and output charac- teristics of the GNRFET was analyzed. It is demonstrated that besides the gate voltage, the drain- source voltage has a strong effect on the bipolar characteristic. To describe the GNRFETs＂ beha- vior integrally, two kinds of biases must be taken into account together. The concept of the operation region was further proposed. The operation regions of the GNRFET are divided to four parts, as the hole conduction region, electron conduction region, conversion region and cut-off region. The presented analytical investigation can be applied to direct the GNRFETs＂ design and applications.