摘要
等离子体增强原子层沉积(PEALD)是一种低温制备高质量超薄薄膜的有效手段,近年来正受到工业界和学术界广泛的关注。简要介绍了PEALD的发展历史和生长原理。描述了PEALD常见的三种设备构造:自由基增强原子层沉积、直接等离子体沉积和远程等离子体沉积,比较了它们的优缺点。着重评述了PEALD的特点,主要具有沉积温度低、前驱体和生长材料种类广、工艺控制灵活、薄膜性能优异等优势,但也面临着薄膜三维贴合性下降和等离子体损伤等挑战。列举了PEALD的一些重要应用,如在金属薄膜制备、铜互连阻挡层、高介电常数材料、薄膜封裹等领域的应用。最后展望了PEALD的发展前景。
Plasma enhanced atomic layer deposition(PEALD) is an efficient method for the pre-paration of high-quality ultra-thin films at low temperature,and has drawn great attention from industry and research fields in recent years.The development history and principle of the PEALD are introduced briefly.Three equipment configurations are described,including the radical-enhanced ALD,direct plasma ALD and remote plasma ALD,and their advantages and disadvantages are compared.The characteristics of PEALD are mainly reviewed,such as low deposition temperature,more choices of precursors and materials,flexible processing conditions and good film properties.However,it also faces some challenges from reduced film conformality and plasma damage.Several important applications of PEALD are reviewed,including the metal film deposition,Cu interconnection barrier layer,high dielectric constant materials,and encapsulation.Finally,the development prospects of PEALD are presented.
出处
《微纳电子技术》
CAS
北大核心
2012年第7期483-490,共8页
Micronanoelectronic Technology
基金
国家自然科学基金资助项目(10974085
50932001)
国家重大科技专项课题资助项目(2009ZX02039-004)
关键词
等离子体
原子层沉积(ALD)
薄膜沉积
金属薄膜
互连阻挡层
高介电材料
薄膜封裹
plasma
atomic layer deposition(ALD)
film deposition
metal film
interconnection barrier layer
high dielectric constant material
encapsulation