摘要
分析了高增益砷化镓光导开关中流注一端的辐射复合实验现象,首次引入了单色光(890 nm)的辐射复合系数,导出了流注顶部的单色光自发辐射公式.比较理论计算结果与实验观测结果,两者很好符合,证明了流注顶部的单色光自发辐射模型的合理性.
The radiative recombination from one end of a streamer in high gain GaAs photoconductive semiconductor switches (PCSS) was analyzed. First, the radiative recombination coegicient of monochromatic light (890 nm) was proposed. The equation of spontaneous radiation of the monochromatic light was deduced. The computed results were well consistent with the reported experimental observations. This demonstrates that the model of the spontaneous radiation from the tip of the streamer is reasonable.
出处
《成都大学学报(自然科学版)》
2012年第2期133-135,共3页
Journal of Chengdu University(Natural Science Edition)
基金
四川省科技厅基础应用研究计划(2010JY0160)资助项目
关键词
砷化镓光导开关
流注
辐射复合系数
辐射模型
GaAs photoconductive semiconductor switches (PCSS)
streamer
radiative recombination coef-ficient
radiative model