HVPE生长厚层GaN基片V/Ⅲ对结晶质量的影响

Analysis of the Thick GaN Crystal Qualities underDifferent V/Ⅲ Ratio Grown by HVPE

采用HVPE法,通过改变V/Ⅲ生长厚层GaN基片。分别采用X射线双晶衍射摇摆曲线、拉曼光谱及扫描探针显微镜进行生长晶体结晶质量和显微形貌分析。生长出表面光亮、无坑、无裂痕的60μm以上厚层GaN基片,并简要介绍厚层GaN基片生长过程中V/Ⅲ影响成核岛演变的规律。

This paper describes the thick GaN films grown by HVPE based on V/Ⅲ ratio. Double-crystal X-ray diffraction rocking curve FWHM measurement the different and Raman spectra and microscopic morphology analysis reveal the V/Ⅲ ratio of thick GaN film growth pro-cess to affect the nucleation island evolution. Thick GaN films of 60 μm with brightly surface and crack-free are grown by hydride vapor phase epitaxy.