Halo注入对50nm NMOS器件性能的影响

The Effect of Halo Implantation on the Performance of 50 nm NMOS Device

利用Sentaurus TCAD软件模拟研究了Halo注入工艺参数(注入角度、剂量、能量)对50nm NMOS器件性能的影响。结果表明,Halo注入角度和剂量的增大会使器件的DIBL特性改善,阈值电压提高;而Halo注入能量的增加会引起器件的DIBL特性变差,阈值电压有所降低,并且较注入角度和注入剂量相比,Halo注入能量的工艺窗口要小。Halo注入参数的变化对Ion和Ioff的影响不同,所以器件开关比随Halo注入角度、剂量和能量的增加呈现非单调性改变。器件的结电容则随Halo注入角度增大而下降,随注入剂量增大而上升,随注入能量的增加先上升后下降。对Halo注入各工艺参数影响器件性能的机理进行了分析,并实验制备了纳米尺度的Halo结构NMOS器件。

In this paper, we investigate the effect of varying process parameter of halo im- plantation on the performance of 50 nm NMOS device with process and device simulation. In-creased threshold voltage and improved DIBL value are found for larger tilt angle, higher dose and lower energy of halo implantation. The ratio of Ⅰon to Ⅰoff shows nonlinear variation with halo implantation energy, dose and tilt angle. In addition, larger tilt angle and lower dose of halo im-plantation are beneficial to the reduction of junction capacitance. Explanations of the results are given and nano-scale NMOSFETs with halo structure are fabricated.