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高压超结VDMOS结构设计 被引量：2

Design of Hign Voltage Super Junction VDMOS
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摘要 为改善高压功率VDMOS击穿电压和导通电阻之间的平方率关系,采用超结理论及其分析方法,结合电荷平衡理论,计算了超结VDMOS的理想结构参数,并利用仿真软件SILVACO对超结VDMOS的各个工艺参数(外延厚度,P柱掺杂剂量,阈值电压)进行了优化设计,对器件的正向导通特性和反向击穿特性进行了仿真分析。最终设计了一个击穿电压为815V,比导通电阻为23mΩ.cm2的超结VDMOS。 In order to improve the square rate between breakdown voltage and on-resistance, the ideal device parameters of the super-junction VDMOS are calculated based on the theory of super-junction and the theory of charge balance. Some parameters （epitaxy thickness, P-column implantation dose,threshold voltage） are optimized by the SILVACO software. Forward conduc-tion and reverse breakdown are simulated. Finally, the super-junction VDMOS with breakdown voltage of 815 V and specific on-resistance of 23 mΩ· cm^2are realized.
作者 杨法明 杨发顺 丁召 傅兴华 邓朝勇
机构地区 贵州大学理学院电子科学系
出处 《固体电子学研究与进展》 CAS CSCD 北大核心 2012年第3期298-303,共6页 Research & Progress of SSE
基金 贵州省科学技术基金资助项目(黔科合J字[2008]-2213 [2011]-2203) 贵州省优秀青年科技人才(黔科合人字[2009]-15) 贵州省科技创新人才团队(黔科合人才团队[2010]4005) 贵州省高层次人才基金资助项目(TZJF-2008-31)
关键词 纵向双扩散金属氧化物半导体 超结 电荷平衡 正向导通 反向击穿 VDMOS super-junction charge balance forward conduction reverse break-down
分类号 TN386.1 [电子电信—物理电子学]
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参考文献11

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二级参考文献8

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固体电子学研究与进展
2012年 第3期

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