摘要
主要针对三维集成封装中的关键技术之一的硅通孔互连技术进行电性能研究。首先简要介绍了硅通孔互连技术的背景,利用三维全波电磁仿真软件建立地-信号-地TSV模型,对其TDR阻抗和时域TDR/TDT信号进行分析,同时仿真分析了TSV互连线及介质基板所使用的材料和TSV半径、高度、绝缘层厚度等物理尺寸对三维封装中TSV信号传输性能的影响。研究结果可为工程设计提供有力的技术参考,有效地用于改善互连网络的S21,提高三维集成电路系统的性能。
The electrical characteristics of through silicon vias （TSVs） interconnect technology, which e- merged as one of the key technologies in 3 D integration package, are analyzed. Brief background of TSV technology is given. Then, a 2-tier ground-signal-ground TSV （GSG-TSV） is investigated in time domain and frequency domain using 3D full wave field solver. And the TDR impedance is shown as well as TDR/ TDT signals. At last, the impact of physical configurations and materials on TSV electrical performance is evaluated and analyzed in details. From these preliminary results, S21 in a network could be improved and the performance of 3D circuits and systems would be enhanced.
出处
《中国电子科学研究院学报》
2012年第3期302-306,共5页
Journal of China Academy of Electronics and Information Technology
