期刊文献+

基于0.18μm SiGe BiCMOS工艺的高速比较器分析与设计

Analysis and Design of High Speed Comparator Using 0.18μm SiGe BiCMOS Process
下载PDF
导出
摘要 基于预放大正反馈锁存比较理论,给出了一种8bit 8Gs/s高速比较器的设计.该比较器采用预放大器结构以提高分辨率、加快比较过程,采用主从锁存器降低亚稳态发生概率,采用输出缓冲器改善输出波形、提供测试接口;在HHNEC 0.18μm SiGe BiCMOS工艺下,采用Cadence Spectre进行仿真,结果显示,该比较器精度为4mV,输出摆幅±300mV,锁存时间37ps,过驱动恢复时间22ps,功耗约57mW,表现出良好的性能. A high speed comparator is presented in this paper,which is designed based on the theories of pre-amplifier and positive feedback.This comparator consists of a preamplifier,a master-slave latch,and an output buffer,to improve the resolution and decrease the occurrence probability of metastability.The comparator is fabricated in HHNEC 0.18μm SiGe BiCMOS process and is simulated using Cadence Spectre.The simulation results show that the resolution of the comparator is 4mV,and the differential output voltage swing is±300mV.The latch time and the recovery time of the comparator are relatively 37ps and 22ps,with about 57mW power consumption.
出处 《微电子学与计算机》 CSCD 北大核心 2012年第7期51-54,共4页 Microelectronics & Computer
关键词 锗硅 高速比较器 主从锁存器 精度 SiGe high speed comparator master-slave latch resolution
  • 相关文献

参考文献9

  • 1郭永恒,陆铁军,王宗民.一种高速高精度比较器的设计[J].微电子学与计算机,2011,28(1):50-53. 被引量:4
  • 2Behzad Razavi. Principles of data conversion system design [M]. New York: IEEE PRESS, 1995: 18i- 182.
  • 3Paul R Gray. Analysis and design of analog integrated circuits [M]. New York: Wiley, 2003: 421-422.
  • 4Peter J Lim, Bruce A Wooley. An 8 bit 200-Mhz BiC- MOS Comparator[J]. IEEE JSSC, 1990, 25(1): 192- 199.
  • 5殷湛,郭立,杨吉庆.一种用于流水线ADC的高速电压比较器[J].微电子学与计算机,2006,23(2):182-184. 被引量:11
  • 6Xiangtao Li, John D Cressler. A 7 bit, 18GHz SiGe HBT comparator for medium resolution A/D conver- sion[J]. IEEE BCTM, 2005, 9(2): 144-147.
  • 7Gu Jun, Lian Yong, Design and analysis of a high speed comparator [C] ff RFIT - IEEE. Washington 2005: 215-218.
  • 8Jensen J C, Larson L E. A 16-GHz ultra-high-speed Si-SiGe HBT eomparator[J]. IEEE JSSC, 2003, 38 (9) : 1584-1589.
  • 9Michael Chu, John F. McDonald. A 40Gs/s time in- terleaved ADC using SiGe BiCMOS technology [J]. IEEE JSSC, 2010, 45(2): 380-390.

二级参考文献11

  • 1Behzad Razavi. Design of Analog CMOS Integrated Circuit[M]. The McGraw-Hill Companies, Inc., 1999.
  • 2Erik P Anderson, Jonathan S Daniels. A60-MHz 150-μV Fully-Differential Comparator[J]. Journal of Stellar EE315 Circuits, 1999.
  • 3Won Chul Song, Hae Wook Choi,et al. A 10-b 20-Msample/s Low-Power CMOS ADC [J]. IEEE Journal of Solid-State Circuits, MAY 1995, 30(5).
  • 4Star-Hspice Manual, Release 1999.4, December 1999.
  • 5Behzad Razavi, Bruce A Wooley. Design Techniques for High-Speed, High-Resolution Comparators[J]. IEEE Journal of Solid-State Circuits, Dec.1992, 27(12).
  • 6雷鑑铭 刘三清 东振中 陈钊.12位10MS/s CMOS流水线A/D转换器设计[J].微电子学,31(2).
  • 7Behzad Razavi, Bruce A Wooley. Design techniques for high-speed, high-resolution comparators[J].IEEE Journal of Solid-State Circuits, 1992,27(12) :1916-1926.
  • 8Allen Philip E. CMOS Analog Circuit Design[M]. 2nd ed.北京:电子工业出版社,2003.
  • 9Mehdi Banihashemi, A High-speed high-resolution Comparator[C]// The 47th IEEE International Midwest Symposium on Circuits and Systems. Hiroshima: IEEE, 2004, :81-84.
  • 10Pelgrom M J M, Duinmaijer A C J, Welbers A P G. Matching Properties of MOS Transistors [J]. IEEE Journal of Solid-State Circuits, 1989, 24 ( 5 ): 1433 -1440.

共引文献12

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部