按温度比例因子的低温双极晶体管优化设计

The Optimized Design of Bipolar Transistor According to Temperature Scaling - factors

提出了一种按温度比例因子设计低温双极晶体管的设计规则。在考虑双极晶体管低温效应的前提下,着重分析了双极晶体管发射区和基区的浓度及宽度在低温下的变化情况。结合按温度比例子变化后任何特定温度下的双极晶体管电流增益和截止频率的优化结果,给出了这些参数在按温度比例因子规则设计时温度比例因子的变化参数。

The purpose of this thesis is to establish a design rule with which the bipolar transistors at any specific temperature can be attained. Firstly, the working characteristics of silicon bipolar transistors at low temperature are analyzed and discussed. The physical models of current gain and cutoff frequency fit in with any specific temperature are established. These offer the necessary physical basis to suggest the temperature─scaling law. On the basis of low temperature effects of bipolar transistor, the changing condition of the doping concentration in the emitter and base and the width of the emitter and base are emphatically analyzed. The integrated program to get temperature-scaling factors is presented. The optimized results of current gain and cutoff frequency at any specific temperature according to the temperature scaling law are studied.