单砝码配重法在调节硅片研磨均匀性上的应用研究

Application of single poise counterweight method in adjusting grinding uniformity of silicon wafer

为提高硅片研磨的均匀性,提出了一种通过改变调节砝码位置的新方法。对单砝码配重法的原理、步骤及物理模型进行了详细的论述,并基于LabVIEW软件对该方法进行了可视化。在精密研磨抛光机上进行实验,并用膜厚仪进行均匀性测量。结果表明:在给定的条件下使9.9 cm硅片的均匀性从单靠自重研磨的20μm提高到用配重法调节后的3μm,显著提高了硅片研磨的均匀性。单砝码配重法为解决硅片研磨均匀性问题提供了一种既精确又简便的方法。

To improve the grinding uniformity of silicon wafer, this paper proposed a new approach by changing the position of poise. The principle, procedure and physical model of the single poise counterweight method were described in detail, and then the visualization of this method basing on LabVIEW software was realized. Experiment was carried out on a precision grinding and polishing machine, and the thickness uniformity was measured on the thickness monitor. Experimental results show that the uniformity of three inches silicon wafer is improved from 20 μm to 3 μm comparing to conventional deadweight grinding, so the grinding uniformity of silicon wafer is enhanced markedly. Therefore, the single poise counterweight method provides a precise and convenient way to solve the grinding uniformity problem of silicon wafer.