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Bi_(3.45)Eu_(0.55)Ti_3O_(12)铁电薄膜的光学性能 被引量:1

Optical Properties of Bi_(3.45)Eu_(0.55)Ti_3O_912) Ferroelectric Thin Films
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摘要 采用化学溶液沉积法在石英衬底上制备了Bi3.45Eu0.55Ti3O12(BEuT)铁电薄膜,研究了BEuT薄膜的结构和光学性能。XRD测试结果表明,BEuT薄膜皆形成铋层状钙钛矿型结构,其晶粒尺寸随着退火温度的提高而增加。薄膜的光学透过率曲线显示,在大于500nm的波段BEuT的透过率比较高,而其禁带宽度大约为3.61eV。BEuT薄膜的发光强度随着退火温度的提高,先是增强后减弱,在700℃时达到最大。这与薄膜的结晶状况有关。 Bi3.45Eu0.55Ti3O12 (BEuT) thin films were prepared on quartz substrates by using chemical solution deposition technique, and the structural and optical properties of thin films were studied in this work. XRD results show that BEuT thin films exhibit a polycrystalline bismuth-layered perovskite structure, and the average grain sizes increase with increasing annealing temperature. In the wavelength of above 500 nm, BEuT thin films show high optical transmittance, and the band gaps of all samples are nearly about 3.61 eV. The emission spectra of Eu^3+ ions indicate that the photoluminescence of BEuT thin films is related to the annealing temperature of samples. The emission intensity firstly increases, reaches a maximum for the sample annealed at 700 ℃, and then decreases, which is related to the crystallization of BEuT thin films.
出处 《光电工程》 CAS CSCD 北大核心 2012年第7期97-101,共5页 Opto-Electronic Engineering
基金 福建省自然科学基金(2011J05122) 福建农林大学青年教师科研基金(2011xjj27)
关键词 铁电薄膜 光学透过率 光致发光 ferroelectric thin films optical transmittance photoluminescence
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  • 1Lee H N, Hesse D, Zakharov N, et al. Fen'oelectric Bi3.25La0.75Ti3O12 films oftmiform a-axis orientation on silicon substrates [J]. Science(S1095-9203), 2002, 296(5575): 2006-2009.
  • 2Hu G D, Fan S H, Cheng X. Anisotropy of ferroelectric and piezoelectric properties of Bi3.15Pr0.ssTi3O12 thin films on Pt(100)/Ti/SiO2/Si substrates [J]. J. Appl. Phys(S0021-8979), 2007, 101(5): 0541t 1.
  • 3Cheng Z X, Wang X L, Ozawa K, et al. Room temperature ferroelectric-ferromagnetic Bi3.25Smo.75Ti298Vo.o2Oi2/Lao.67 Sro.33 MnO3 double layer heterostructure [J]..I. Phys. D: Appl. Phys(S0022-3727), 2007, 40(3): 703-706.
  • 4Ruan K B, Chen X M, Liang T, et al. Photoluminescence and electrical properties of highly transparent (Bi, Eu)4Ti3Ol2 ferroelectric thin films on indium-tin-oxide-coated glass substrates [J]. J. Appl. Phys(S0021-8979), 2008, 103(7): 074101.
  • 5Ruan K B, Chen X M, Liang T, et al. Improved photoluminescence and electrical properties of Eu- and Gd- codoped bismuth titanate ferroelectric thin films [J]. J. Appl. Phys(S0021-8979), 2008, 103(8): 086104.
  • 6Zhou H, Chen X M, Wu G H, et al. Significantly enhanced red photoluminescence properties of nanocomposite films composed of a ferroelectric Bi36Eu0.4Ti3012 matrix and highly c-axis-oriented ZnO nanorods on si substrates prepared by a hybrid chemical solution method [J]. J. Am. Chem. Soe(S 1520-5126), 2010, 132(6): 1790-1791.
  • 7Bao D H, Chiu T W, Wakiya N, et al. Structural and electrical characteristics of chemical-solution-derived (Bi, La)4Ti3Oi2 thin films with various Bi203 template layers [J]. J. Appl. Phys(S0021-8979), 2003, 93(1): 497-503.
  • 8Chang Y C, Kuo D H. The improvement in ferroelectric performance of(Bi3.15Nd0.85)4Ti3Oi2 films by the addition of hydrogen peroxide in a spin-coating solution [J]. Thin Solid Films(S0040-6090), 2006, 515(4): 1683-1687.
  • 9Ma J H, Meng X J, Sun J L, et al. Ferroelectric and optical properties ofBi325Nd075Ti3O12 thin films prepared by a chemical solution method [J]. J. Phys. D: Appl. Phys(S0022-3727), 2004, 37(22): 3160-3164.
  • 10Joshi P C, Mansingh A, Kamalasanan M N, et al. Structural and optical properties of ferroelectric Bi4Ti3Ol2 thin films bysol - gel technique [J]. Appl. Phys. Lett(S0003-6951), 1991, 59(19): 2389.

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