OLED用三氧化钨缓冲层的研究

Study of Tungsten Oxide Buffer Layer for OLED Device

采用反应直流磁控溅射法在衬底温度为300℃玻璃基板上制备了掺钨氧化铟(IWO)作为OLED器件的阳极,然后室温条件下在IWO上制备了三氧化钨缓冲层.XRD分析表明三氧化钨为非晶结构.对比测试了有无WO3缓冲层的两种OLED器件,发现带有WO3缓冲层的OLED器件的亮度和功率均是无三氧化钨缓冲层的器件的两倍,而且发光效率最高可以达到对比器件的4倍.从器件能带排列的角度初步讨论分析了提高器件性能的原因.

Tungsten-doped indium oxide（IWO） thin films have been deposited on glass substrates by DC reactive magnetron sputtering at 300℃ as anode electrode,and then tungsten oxide was sputtered as a buffer layer on it at room temperature.XRD analysis reveals that the WO3 film is amorphous.Both luminance and power efficiency of the OLED device inserted with tungsten oxide buffer layer is two times larger than those of the OLED device without buffer layer,and the maximum luminance efficiency reaches four times.The mechanism for performance improvement is discussed from the viewpoint of band alignment.