摘要
In this paper, by using the transfer matrix method, we theoretically investigate the magnetoresistance （MR） effect in a two-dimensional electron gas （2DEG） modulated by two Schottky metal （SM） stripes and two ferromagnetic （FM） stripes on the top and bottom of the 2DEG. From the numerical results, we find that a considerable MR effect can be achieved in this device due to the significant difference between electron transmissions through the parallel and antiparallel magnetization configurations. We also find that the MR ratio obviously depends on the magnetic strength and the electric-barrier height as well as the distance between the FM and SM stripes. These characters are very helpful for making the new type of MR devices according to their practical applications.
In this paper, by using the transfer matrix method, we theoretically investigate the magnetoresistance （MR） effect in a two-dimensional electron gas （2DEG） modulated by two Schottky metal （SM） stripes and two ferromagnetic （FM） stripes on the top and bottom of the 2DEG. From the numerical results, we find that a considerable MR effect can be achieved in this device due to the significant difference between electron transmissions through the parallel and antiparallel magnetization configurations. We also find that the MR ratio obviously depends on the magnetic strength and the electric-barrier height as well as the distance between the FM and SM stripes. These characters are very helpful for making the new type of MR devices according to their practical applications.
基金
supported by Hubei Province Key Laboratory of Systems Science in Metallurgical Process,Wuhan University of Science and Technology(No.C201018)
