摘要
The polysilicon p-i-n diode displays noticeable process compatibility and portability in advanced tech- nologies as an electrostatic-discharge （ESD） protection device. This paper presents the reverse breakdown, current leakage and capacitance characteristics of fabricated polysilicon p-i-n diodes. To evaluate the ESD robustness, the forward and reverse TLP I-V characteristics were measured. The polysilicon p-i-n diode string was also investigated to further reduce capacitance and fulfill the requirements of tunable cut-in or reverse breakdown voltage. Finally, to explain the effects of the device parameters, we analyze and discuss the inherent properties ofpolysilicon p-i-n diodes.
The polysilicon p-i-n diode displays noticeable process compatibility and portability in advanced tech- nologies as an electrostatic-discharge （ESD） protection device. This paper presents the reverse breakdown, current leakage and capacitance characteristics of fabricated polysilicon p-i-n diodes. To evaluate the ESD robustness, the forward and reverse TLP I-V characteristics were measured. The polysilicon p-i-n diode string was also investigated to further reduce capacitance and fulfill the requirements of tunable cut-in or reverse breakdown voltage. Finally, to explain the effects of the device parameters, we analyze and discuss the inherent properties ofpolysilicon p-i-n diodes.
