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Design and fabrication of an InP arrayed waveguide grating for monolithic PICs 被引量:1

Design and fabrication of an InP arrayed waveguide grating for monolithic PICs
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摘要 A 10-channel, 200 GHz channel spacing InP arrayed waveguide grating was designed, and the deep ridge waveguide design makes it polarization independent. Under the technologies of molecular beam epitaxy, lithography, and induced coupler plasma etching, the chip was fabricated in our laboratory. The test results show that the insertion loss is about -8 dB, and the crosstalk is less than -17 dB. A 10-channel, 200 GHz channel spacing InP arrayed waveguide grating was designed, and the deep ridge waveguide design makes it polarization independent. Under the technologies of molecular beam epitaxy, lithography, and induced coupler plasma etching, the chip was fabricated in our laboratory. The test results show that the insertion loss is about -8 dB, and the crosstalk is less than -17 dB.
出处 《Journal of Semiconductors》 EI CAS CSCD 2012年第7期65-68,共4页 半导体学报(英文版)
基金 supported by the National High Technology Research and Development Program of China(No.2011AA010303) the National Natural Science Foundation of China(Nos.61090390,60837001,60877014,60776057)
关键词 InP AWG monolithic PICs polarization independence InP AWG monolithic PICs polarization independence
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参考文献11

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同被引文献8

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  • 5赵雷. 基于SOI纳米线阵列波导光栅的研究[D]. 北京: 中国科学院研究生院, 2011.
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  • 7刘英斌,林琳,陈宏泰,赵润,郑晓光.InGaAs/InP材料的MOCVD生长研究[J].半导体技术,2010,35(2):113-115. 被引量:4
  • 8陆思,严瑛白,金国藩,潘裕斌.低插入损耗阵列波导光栅的设计[J].光子学报,2003,32(7):769-772. 被引量:7

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