摘要
By combining resonant tunneling spectra with capacitance-voltage (C-V) characteristics under photo-excitation, we have developed photo-excited, capacitance-sensitive resonant tunneling spectrum (PC-RTS) for probing the quantized levels of quantum wells in valence band. Inter-well tunneling events have been identified and are in good agreement with the calculated level scheme in the valence band of a quantum well-barrier-quantum well heterostructure. Compared to conventional resonant tunneling spectrum, our method shows remarkable advantages in higher sensitivity for discriminating electronic structures.
By combining resonant tunneling spectra with capacitance-voltage （C-V） characteristics under photo-excitation, we have de- veloped photo-excited, capacitance-sensitive resonant tunneling spectrum （PC-RTS） for probing the quantized levels of quan- tum wells in valence band. Inter-well tunneling events have been identified and are in good agreement with the calculated level scheme in the valence band of a quantum well-barrier-quantum well heterostructure. Compared to conventional resonant tun- neling spectrum, our method shows remarkable advantages in higher sensitivity for discriminating electronic structures.
基金
supported by the National Basic Research Program of China (Grant No. 2011CB932901)
