Ge/Si(100)界面互扩散的喇曼光谱

Interdiffusion of Si and Ge Atoms During Epitaxy Growth of Ge Layer on Si (100) Studied by Raman Spectroscopy\+*

利用喇曼光谱研究了不同温度下在 Si(1 0 0 )衬底上异质外延 Ge层由于扩散引起的 Ge/Si异质结界面互混以及表面活化剂 Sb对其的影响 .结果表明表面活化剂 Sb的存在大大抑制了界面的互扩散 ,在 650℃下也没有观察到明显的界面互混 .没有 Sb时 ,在 50 0℃下已存在一定程度的界面互混 ,界面互混程度随外延层生长温度的增高而增强 .

Interdiffusion of Si and Ge atoms and the surfactant's influence during epitaxy growth of Ge layer on Si (100) at different temperatures are studied by Raman spectroscopy. The results show that Sb as a surfactant can greatly suppress the interdiffusion at Ge/Si interface. With surfactant Sb, no significant atomic intermixing can be observed even at the growth temperature of 650℃, whereas without Sb, the intermixing due to the interdiffusion occurred at temperature of 500℃, interface intermixing increases with the growth temperature of the Ge epilayer. Such difference is believed to be related to the strain relaxation process during Ge epilayer growth.