摘要
研究了掺砷多晶硅发射极 RCA晶体管的工艺实验技术 .以先进多晶硅发射极器件制备工艺为基础 ,在淀积发射极多晶硅之前 ,用 RCA氧化的方法制备了一层超薄氧化层 ,并采用氮气快速热退火的方法处理 RCA氧化层 ,制备出可用于低温超高速双极集成电路的掺砷多晶硅发射极 RCA晶体管 .晶体管的电流增益在 - 55— + 1 2 5℃温度范围内的变化率小于 1 5% ,而且速度快 ,发射区尺寸为 4× 1 0μm2 的 RCA晶体管其特征频率可达 3.3GHz.
The experimental technology of processing arsenic\|doped poly\|silicon emitter RCA transistor is investigated. Based on the advanced fabrication processes of poly\|silicon emitter transistor,a layer of super thin oxide is produced by using RCA oxidation before poly\|silicon of the emitter is deposited.Then the RCA oxide is treated by nitrogen rapid thermal anneal,then an arsenic\|doped poly\|silicon emitter RCA transistors applied to the high\|speed bipolar IC at low temperature are fabricated.The current gain of RCA transistor varies below 15% in the temperature range of -55—+125℃.Maximum cut\|off frequency of 3 3GHz is achieved by the RCA transistor with 4×10μm 2 emitter area.
关键词
RCA晶体管
多晶硅发射极
掺砷
RCA transistor
poly\|silicon emitter
arsenic doped
