摘要
采用金属有机物气相外延方法 ,研制了 In Ga N/Ga N单量子阱结构的绿光发光二极管 .测量了其电致发光光谱 ,及发光强度与注入电流的关系 .室温 2 0 m A的注入电流时 ,发光波长峰值为 530 nm,半高宽为 30 nm.注入电流小于 40 m A时 。
InGaN green LEDs with single quantum well structures based on Ⅲ\|Ⅴ nitrides were grown by MOVPE on sapphire substrates.The peak wavelength and the full width at half\|maximum of the electroluminescence are 530nm and 30nm,respectively.This is first report on single quantum well GaN based green LEDs in China.
基金
国家"8 63"高技术计划资助项目!( 863 -71 5-0 0 1 -0 0 1 0 )
