摘要
通过采用底部绝缘结构的GaAs外延结构技术,并采用化学腐蚀和绝缘胶相结合的隔离技术,制作出了在激光器(波长790~850 nm)照射条件下具有高转换效率的激光供能微型(2.1 mm×2.1 mm)GaAs电池。实验结果显示该电池的开路电压达到6 V以上,具有良好隔离特性,但是由于边缘漏电影响填充因子,最终的转换效率为33.7%。在电极结构设计和互联处理工艺上的改进有助于提高电池的效率。
A interlinked micro GaAs optical power receiver (2.1 mm × 2.1 mm) with the technology of GaAs epitaxial was developed, combined with the relative etching and protect technology. The open circuit voltage of the receiver can exceed 6 V under the laser irradiation with the wavelength of 790-850 nm, which indicates that the receiver has an excellent isolation characteristic. But the conversion efficiency of the receiver can only reach 33.7% because of the leakage current. However, the conversion efficiency of the receiver can be improved by the optimizing of the electrode structure and process technology.
出处
《电源技术》
CAS
CSCD
北大核心
2012年第7期1015-1016,1029,共3页
Chinese Journal of Power Sources
关键词
激光供能
微型GaAs电池
隔离技术
laser irradiation
micro GaAs power receiver
Isolation technology