二氧化硅钝化膜提高GaN基LED光提取效率的研究

Study on Enhancement of Light Extraction Efficiency for GaN-based Light-emitting Diode by Coating SiO_2 Passivation Layer

介绍了通过二氧化硅增透膜来提高GaN基LED光提取效率,采用等离子体增强气相沉积法(PECVD)制备了二氧化硅钝化膜,经对器件的测试表明,在器件上沉积二氧化硅增透膜能够使器件的出光效率提高28.4%,同时提高了器件的可靠性。

This paper introduces a Way of enhancement of light output power for GaN based LED by coating passivation layers, we fabricated SiO2 films through Plasma Enhance Chemical Vapour Deposition （PECVD） to serve as the passi vation layer of GaN＇ LEDs. The light output power of the LED improved 28.4% after depositing the SiO2 passivafion layer.