双岛结构多晶硅压力传感器削角补偿技术的研究

THE STUDY ON CORNER UNDERCUTTING COMPENSATION OF TWIN-ISLE STRUCTURE POLYSILICON PRESSURE SENSOR

详细讨论了双岛结构多晶硅压力传感器制作过程中的一种微机械加工技术 .传感器采用的材料是双面抛光的 (1 0 0 )晶面硅片 ,制作中还利用了半导体集成电路平面工艺 .研制这种传感器遇到的主要问题是硅各向异性腐蚀的凸角削角问题 .为削角补偿设计了两种特殊形状的掩膜结构 ,在实验中获得了满意的效果 。

This paper mainly discusses a micromachining technology used during the fabrication of the twin isle structure polysilicon pressure sensor.The starting material of the sensor is (100) orientated monocrystal silicon wafer with double sides polished.The semiconductor IC process is also used in the fabrication.A main problem in preparation is the convex corner undercutting during the anisotropic etching.Two special pattern mask structures are designed for compensation.The results of experiments are quite good,and the optimized twin isle structure polysilicon pressure sensors with excellent properties are fabricated.