摘要
采用叶绿素荧光技术,以光系统Ⅱ最大荧光产量(Fv/Fm)为指标,结合形态显微观察,研究了GeO2在海带幼孢子体培育过程中菱形藻污染的抑制效应。结果表明,1)对于菱形藻,当GeO2浓度在5mg/L以上时,对其Fv/Fm值有显著影响,达到或超过15mg/L时菱形藻趋于死亡。2)对于海带幼孢子体,GeO2浓度在20mg/L以上时,对其Fv/Fm值有显著影响,达到或超过30mg/L时其趋于死亡。3)对于受到菱形藻污染的海带幼孢子体,GeO2浓度在15mg/L以上时对其Fv/Fm值有显著影响,达到或超过20mg/L时其趋于死亡。综合来看,当GeO2浓度为5~15mg/L时,菱形藻光合作用受到较强的抑制,而对海带幼孢子体影响不大。
In the present study, using the chlorophyll fluorescence technique, the sup- pressive effect of germanium dioxide (GeO2)on Nitzschia sp. contamination during the cultiva- tion of Saccharina japonica seedling was investigated with the photosystem II maximum {luo- rescence yield (Fv/Fm) as the index. The results showed that: 1) When the concentration was above 5mg/L, GeO2 affected Fv/Fm value of Nitzschia sp. significantly, whereas when the concentration was 15mg/L or above,GeO2 had lethal effect on Nitzschia sp. ; 2) To the young sporophytes of S. japonica, GeO2 at concentrations of 20mg/L or above affected the Fv/Fm value significantly, whereas GeO2 at concentrations of 30mg/L or above had lethal effect on young sporophytes; 3) To the young sporophytes contaminated by Nitzschia sp., the Fv/Fm value was affected significantly by GeO2 taminated young sporophytes died when tively, GeO2 at concentrations of 5-15 sp. significantly, but only had a minor at concentrations of 15 mg/L or above , while the con- GeO2 concentration was 20 mg/L or above. Compara- mg/L could suppress the photosynthesis of Nitzschia effect on photosynthesis of S. japonica young sporo- phytes. Therefore, GeO2 at concentrations of 5-15 mg/L could prevent the Nitzschia sp. con- tamination during the cultivation of S. japonica young sporophytes. The results obtained from the present study could provide the basis for preventing the Nitzschia sp. contamination during the cultivation of S. japonica young sporophytes.
出处
《渔业科学进展》
CSCD
北大核心
2012年第3期83-87,共5页
Progress in Fishery Sciences
基金
国家“863”项目(2012AA10A406)资助
海带行业专项(B22201002)共同资助
关键词
GeO2
海带幼孢子体
菱形藻
叶绿素荧光技术
Germanium dioxide Saccharina japonica sporophytes Nitzschia sp. Chlorophyll fluorescence technique