Ga和Cu／In衬底上电沉积金属Ga

Electrodepositied Gallium on Gallium and Copper/Indium Substrates

在酸性水溶液中,分别在金属Ga和Cu/In衬底上进行了Ga电沉积的研究.用循环伏安法研究了导电盐、pH值对电沉积Ga的影响.系统研究了Ga的沉积过程,发现Ga会逐渐向薄膜内部扩散,在Cu/In界面上与CuIn合金反应生成CuGa2合金.针对Cu/In薄膜和Ga薄膜是活泼金属的特点,在溶液中加入三乙醇胺有效地保护了Cu/In薄膜和Ga金属薄膜不被氧化,并且提高了Ga沉积的电流效率.在Cu/In薄膜上制备出了均匀光亮的金属Ga薄膜.对电沉积出Cu-In-Ga预置层进行了硒化处理,得到了质量较好的Cu(In1-xGax)Se2(CIGS)薄膜,并制备了太阳电池.电池效率达到了9.42%.

We investigate the electrodeposition of gallium metallic precursor on gallium and Cu/In substrates from acidic aqueous solutions. The effect of the supporting electrolyte and the solution pH value for the electrodeposition of Ga is investigated by cyclic voltammetry. During Ga electrodeposition, gallium gradually diffuses into the film, and reacts with CuIn alloy to produce CuGae2 at the Cu/In interface. We use triethanolamine to protect the Cu/In and Ga films from being oxidized, and thus this improves the current efficiency of Ga-electrodeposition. The Cu-In-Ga films are annealed in an Se atmosphere to produce In1-xGaxSee2（CIGS） thin films with high quality, and the efficiency of the solar cell prepared using these films is 9.42%.