新型4H-SiC肖特基二极管的仿真与分析

Simulation and analysis of a novel 4H-SiC Schottky barrier diode

设计了斜面结构碳化硅肖特基二极管(4H-SiC SBD)并且在器件中加入场环结构,通过基于半导体物理理论的计算机辅助设计软件(Silvaco-TCAD)分析计算了常规结构和新结构SiC-SBD器件的V-I特性、击穿电压、温度热学分布。对比计算结果,可知新结构SiC-SBD器件击穿电压提高至2300 V,导通电阻减小,温度热学分布明显优于常规结构SiC-SBD器件。

A novel structure for a gH-SiC Schottky barrier diode （SBD） with an inclined plane and field rings has been proposed. The silvaco computer aided design （TCAD） software, which is based on semiconductor theory, has been used to simulate the structures of the new 4H-SiC SBD and a 4H-SiC SBD with the conventional structure and the electric V-! characteristics, the breakdown voltage and heat distribution of the 4H-SiC SBD devices with differ- ent structures were compared. The new gH-SiC SBD had a significantly better performance in terms of electric V-I characteristics and heat distribution in devices, and had a breakdown voltage of 2300 V.