摘要
提出了一种采用0.18μm CMOS工艺的3.1~10.6GHz超宽带低噪声放大器.电路的设计采用了电流复用技术与阻抗反馈结构,具有低功耗和平坦增益的特性.仿真结果显示,在3.1~10.6GHz频率变化范围内,低噪声放大器达到平均17.5dB的电压增益,输入和输出的回波损耗均低于-8dB,最小噪声系数约为2.8dB,在电源电压为1.5V下功耗约为11.35mW.
This paper presented a 3.1~10.6 GHz ultra-wideband (UWB) low noise amplifier (LNA) in a 0. 18μm CMOS process. The circuit was designed with current-reuse and impedance feedback technol- ogy, so it has the characteristics of low power dissipation and flat gain. Simulation results have shown that, across the frequency band of interest, the LNA achieves 17.5 dB of average gain, the input and out- put return loss is lower than --8 dB, respectively, the minimum NF is about 2.8 dB, and the power dissi- pation is about 11.35 mW under the power supply of 1.5 V.
出处
《湖南大学学报(自然科学版)》
EI
CAS
CSCD
北大核心
2012年第7期49-53,共5页
Journal of Hunan University:Natural Sciences
基金
湖南省科技计划项目(2010FJ4246)