摘要
在硫酸铜电解液中加入硫酸钠,利用电沉积和X-射线衍射方法研究了不同提纯铜工艺制备的铜镀层及织构特征。结果表明,织构度受到电流密度、镀层厚度和温度的影响,在较小的电流密度、较高温度及在较薄厚度的铜镀层得到(111)晶面择优取向,在较高的电流密度及在镀层δ达到30μm时得到(220)晶面择优取向,而且铜镀层(220)晶面比(111)晶面更易保留,(220)晶面使纯铜能获得更好的电化学性能,保持纯铜晶面的择优取向对铜在半导体的应用产生了深远的影响。
Structures of the copper layer produced by different electrolytic refining techniques in sodium sulphate containing electrolyte were researched by electroplating and X-ray diffraction.Results indicated that the copper layer structures were affected by current density,deposit thickness and temperature.The preferred orientation of the copper layer produced under lower current density,higher temperature and possessing thin thickness was(111) crystal plane,while the preferred orientation of the copper layer produced under higher current density and possessing thickness extending 30 μm was(220) crystal plane which was easier to be reserved than(111) crystal plane.(220) crystal plane could make the pure copper to obtain better electrochemical capability.Maintaining the preferred orientation of the pure copper had brought a profound impact on its applications in semiconductors.
出处
《电镀与精饰》
CAS
北大核心
2012年第7期1-4,共4页
Plating & Finishing
关键词
电解精炼
提纯铜
铜镀层
织构
electrolytic refining; copper purification; copper deposit; structure