铁电(Ba,Sr)TiO_3及介电Bi_2O_3-ZnO-Nb_2O_5薄膜材料应用于电调谐微波器件研究进展

The Research on Ferroelectric(Ba,Sr)TiO_3 and Dielectric Bi_2O_3-ZnO-Nb_2O_5 Thin Films Applied in Electrically Tunable Microwave Devices

铁电钛酸锶钡BaxSr1-xTiO3(BST)是一种拥有十分优越铁电/介电性能的材料,在可调谐微波器件方面具有很好的应用前景。本文概括介绍了BST薄膜的研究意义、基本结构、薄膜的制备方法,并针对可调谐微波器件应用需求,详细探讨了通过掺杂、组分梯度变化、纳米铁电多层薄膜以及将铁电BST与新型介电Bi2O3-ZnO-Nb2O5(BZN)薄膜相结合等对铁电薄膜性能进行优化的手段,最后对该领域的前沿问题从材料研究层面作了小结与展望。

Ferroelectric materials BaxSr1-x TiO3 （BST） have excellent ferroelectric/dielectric proper- ties, and have good application prospect in tunable microwave devices. In this grounds, basic structures, preparation methods of ferroelectric thin films are the methods to improve the quality of ferroelectric thin films are discussed in article, the research back summarized. Furthermore, great detail to meet the re- quirements for microwave applications. Finally, the current problems in ferroelectric materials research are concluded and the prospect of ferroelectric materials is given.