N-型立方氮化硼的欧姆接触的制备

Preparation of c-BN ohmic contact

文内报告了尺寸为 0 .3× 0 .3mm2 的立方氮化硼单晶的N 型掺杂 ,然后用特殊的测量装置测量了N 型立方氮化硼的欧姆接触之后的伏 -安特性。

In this thesis, using Si as source, we have doped c BN by high temperature diffusion method, then V A characteristics of ohmic contact of n type cubic boron nitride(c BN) has been studied by special made device.