摘要
利用扫描隧道显微镜(STM)对Si(111)在氨气气氛下进行氮化所获得的氮化硅薄膜形貌和表面结构进行了系统分析,结果表明在1075—1275K的温度下对Si(111)进行氮化可以获得较平整的晶态βSi3N4薄膜,并在氮化膜表面观察到了Si3N4(0001)表面的(4×4)再构.
The morphology and surface structures of silicon nitride films grown on Si(111) by exposing to ammonia at high temperature have been systematically studied using scanning tunneling microscopy. The results showed that flat β\|Si\-3N\-4 crystalline films could be obtained at a nitridation temperature of 1075—1275?K. A (4×4) reconstruction of β\|Si\-3N\-4(0001) was observed on the nitride film.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2000年第2期215-219,共5页
Acta Physica Sinica
基金
香港特别行政区研究拨款委员会资助!(RGC)
