摘要
采用溶胶-凝胶(Sol-Gel)法在Si(100)衬底上制备了LaNiO3薄膜,然后在LaNiO3/Si(100)上制备了钙锶铋钛薄膜。研究了热处理工艺对LaNiO3(LNO)薄膜的影响。研究结果表明,当热分解温度为350℃、退火温度为750℃,厚为250nm时,制备的LNO薄膜的(110)衍射峰取向择优最明显,电阻率也较低,(为1.8×10-3Ω.cm)。LNO缓冲层的引入促进钙锶铋钛薄膜沿A轴方向生长,明显改善了钙锶铋钛薄膜的电性能,即剩余极化强度Pr=15.2μC/cm2,矫顽电场Ec=70kV/cm。
LNO thin films were prepared on Si （100） substrates by Sol-Gel method, and then Ca0.4 Sr0.6 Bi4 Ti4 O15 thin films with LaNiO3 buffer layer on LaNiO3/Si （100） were prepared. The effect of pre-annealed temperature, annealed temperature and thickness on resistivity and structure of LNO films was investigated. It was found that the low resistivity and high （110）--oriented LNO film made by decomposed at 350℃ and then annealed at 750 ℃ when the thickness was 250 nm. The Ca0. 4 Sr0.6 Bi4 Ti4O15 thin film sample exhibited higher A-axis orientation. The relative remnantent polarization （Pr） and coercive field （Ec） of Cao. 4 Sr0.6 Bi4 Ti4 O12/LNO were 15.2 uC/cm2 and 70 kV/cm, respectively.
出处
《压电与声光》
CSCD
北大核心
2012年第4期597-600,共4页
Piezoelectrics & Acoustooptics
基金
山东省教育厅高校科研发展计划基金资助项目(J10LD55)
关键词
镍酸镧
缓冲层
钙锶铋钛
制备
电性能
LaNiO3
buffer layer
Cao. 4 Sro 6 Bi
Ti4 O15
preparation
electric property
