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N-LDMOSFET的掺杂分布与热载流子效应

Relationship between regional doping and hot carrier effect in N-LDMOSFET
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摘要 文章从MOSFET热载流子效应角度研究了N-LDMOSFET在不同的区域掺杂浓度条件下器件的最坏热载流子应力条件;在确定的器件工作条件下结合器件仿真结果,分析了在不同掺杂浓度下器件电特性退化的趋势;详细分析了导致器件退化趋势不同的原因,重点讨论了沟道掺杂和漂移区掺杂与器件热载流子效应关系,提出了N-LDNMOS中区域掺杂的优化策略。 The worst condition of hot carrier stress in the N-LDMOSFET under different conditions of the regional doping concentration of devices is studied from the perspective of MOSFET hot carrier effect. Then based on the simulation results and certain working conditions, the degradation trends of devices under different doping concentration are analyzed. The different causes of the degradation of devices are analyzed, focusing on the relationship between the channel doping and drift region doping and the hot carrier effect. Accordingly, the optimization strategies for the regional doping in N-LDNMOS are proposed.
作者 罗扣 陈军宁 高珊 张志伟
机构地区 安徽大学电子信息工程学院
出处 《合肥工业大学学报（自然科学版）》 CAS CSCD 北大核心 2012年第7期930-934,共5页 Journal of Hefei University of Technology：Natural Science
基金 国家自然科学基金资助项目(60876062)
关键词 N—LDMOSFET 热载流子效应 区域掺杂 退化 优化策略 N- LDMOSFET hot carrier effect regional doping degradation optimization strategy
分类号 TN301 [电子电信—物理电子学]
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参考文献10

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合肥工业大学学报（自然科学版）
2012年 第7期

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