离子源及厚靶参数对氘氚反应中子源中子产额的影响

Effects of ion source and target thickness on neutron yield from deuterium-tritium reaction neutron source

用厚靶氘氚(D-T)反应中子产额的计算方法模拟计算了入射氘离子能量为120 keV时D-T中子源的中子产额。研究了氘离子源产生的束流中单原子氘离子(D+)及双原子氘离子(D2+)比例对中子产额的影响。结果表明,提高D+比例,同时降低D2+比例将有效提高中子产额。另外还研究了不同靶膜材料及组分引起的中子产额变化。表明中子产额与靶膜中氚的含量成正比,与靶膜元素的原子质量成反比。同时分析讨论了离子源品质及靶参数对中子源整体性能的影响,得出离子源束流品质的提高对中子源整体的设计至关重要。最后,模拟计算了靶膜表面有氧化层情况下中子产额的变化,并与实验结果作了对比。在此基础上提出了一种新的靶设计方案,并对其物理可行性进行了研究。

In this paper, for designing a neutron source, the neutron yield of T（d, n）4He reaction at 120 keV of incident deuteron energy is calculated by a mathematical method. The neutron yield by the incident beams of different percentages of D＋ and D2＋ was studied. The neutron yield increase effectively with the percentage of D＋ and decreases with increasing percentages of D2＋. The effects of different target materials and components on the neutron yield are studied. The neutron yield is in proportion to the content of the tritium and in inverse proportion to the target atomic mass. Parameters of the ion source and the thick target are analyzed for improving performance of the neutron source. Effects of the oxide layer or film coatings in surface of the titanium tritide film on neutron yield are calculated, too. The results are compared with experimental results. A novel target design is introduced and its feasibility is studied.