期刊文献+

GaAs/SiO_2超晶格的制备和Raman光谱研究

The Preparation of GaAs/SiO_2 Superlattices and Their Raman Scattering Spectroscopy Study
下载PDF
导出
摘要 我们采用射频磁控溅射方法在 p- Si衬底上成功地制备出四周期的非晶 Ga As/Si O2超晶格 ,并取得其高分辨率电镜像。以 80 0℃快速退火方法使超晶格中非晶的 Ga As层局部晶化 ,利用 Raman散射谱研究了其结构变化。 We have successfully deposited four period amorphous GaAs/SiO 2superlattices (SL s) on p Si substrates using the magnetron sputtering technique. A high resolution electron microscopy image for the structure was obtained. After rapid thermal annealing at 800℃, the structural change of the amorphous GaAs layers in the SLs has been studied using Raman spectroscopy. The results show that for the unannealed sample and the sample annealed at 300℃, both GaAs and SiO 2layers are amorphous, while that after 800℃ thermal annealing, the GaAs layers in the SLs were partially crystallized.
出处 《光散射学报》 2000年第3期142-146,共5页 The Journal of Light Scattering
基金 国家自然科学基金委资助
关键词 超晶格 砷化镓 二氧化硅 拉曼光谱 Raman scattering superlattice HRTEM magnetron sputtering
  • 相关文献

参考文献3

  • 1Bai G F,Appl Phys Lett,1998年,72卷,3408页
  • 2Qin G G,Solid State Commun,1998年,106卷,329页
  • 3Lu Z H,Nature,1995年,378期,258页

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部