砷化镓气相外延中Zn的行为和微光材料的制备

THE ZINC INCORPORATION AND THE PREPARATION OF PHOTOCATHODE MATERIALS IN Ga-AsCl_3-H_2 SYSTEM

在Ga-AsCl_3-H_2系统中用金属Zn为掺杂剂,研究了气相外延GaAs时Zn的掺入和行为。GaAs中Zn的分配系数和空穴浓度分别为10和大于10^(20)cm^(-3),它们都比掺Cd的GaAs大2—3个数量级。这保证了用以制备光阴极材料所需的高空穴浓度的P-GaAs。结合掺Zn和掺s,已重复制得界面良好的P-n结构材料。

The incorporation and behavior of impurity Zn in VPE of GaAs are studied by using metallic Zn as a dopant in Ga-AsCl3-H2 system. The distribution coefficient and hole concentration of Zn in GaAs are 10 and >1×1020cm-3 respectively, which are 3 or 2 order greater than that of Cd doping, and it ensures the preparation of p-GaAs with high hole concentration for photocathode fabrication. Combining Zn and S doping techniques, the p-n junction structure materials were reproducibly produced with more abrupt transition interface.