石墨烯场效应管的Verilog-A建模

Verilog-A Model for Graphene Field Effect Transistors

在传统硅基器件日益趋近物理极限的背景下,石墨烯场效应管作为一种新型纳米器件受到了广泛关注。以漂移-扩散传输理论为基础,得到了石墨烯场效应管的漏电流解析表达式,并以此建立了适合电路设计的石墨烯场效应管Verilog-A模型。利用该模型对栅长为10μm、沟道宽度为5μm的石墨烯场效应管进行HSPICE仿真,仿真结果与实验所测数据相符。在此基础上,给出了基于石墨烯场效应管的共源放大电路、共漏放大电路和共栅放大电路三种基本电路组态的仿真结果,表明石墨烯场效应管应用于模拟及RF电路具有广阔的前景。

Since conventional silicon-based devices increasingly approach their physical limits, the graphene field effect transistor （GFET） attracts attention widely as a novel nano-scale device. Based on the drift-diffusion theory, an analytic expression of the GFET＇s drain current was deduced, and the GFET Verilog-A model fitted for the circuit design was constructed. The simulation of the model in HSPICE for an L = 10μm and W= 5μm GFET was carried out, and the simulation results fit the experimental results. Besides that, the simulation results of three basic circuit configurations for the common-source amplifying circuit, common-drain amplifying circuit and common-gate amplifying circuit based on the GFET were given. And the result exhibits GFET＇s brilliant prospects for analog and RF circuit applications.