碳化硅薄膜制备影响因素分析

Analysis of Factors Influencing Si-C Film Making

碳化硅薄膜因其具有一系列优异的特性,被视为制作电子元件的重要材料,性能好、用途广。高质量SiC薄膜的生长,不仅有利于解决自补偿问题,而且有利于解决薄膜中存在应力和杂质等问题,对SiC薄膜的应用,特别是在微电子器件上的应用尤为关键。因此如何制作高质量的碳化硅薄膜是亟待解决的问题。为此,文中从大量试验中,找出了其主要影响因素;从衬底负偏压、工作温度和衬底温度、工作介质、射频功率、工作气压、沉积时间、Gr几个方面进行分析,得出了制备碳化硅薄膜的影响规律。

Silicon carbide （SiC） is viewed as one of the most promising and the most commercioganic semicon- ductors and widely utilized in optoelectronic devices. Growth of high quality silicon carbide （SiC） film, which have advantages in effectively solving perplexed problems existing in the film such as the self-compensation, intrinsic stress and impurity, plays a critical role in the application of SiC film, especially the application of microelectronic devices. Hence, the growth of high quality silicon carbide （SiC） film becomes the problem which needs to be solved immediately. For this reason, a lot of experiments have been done to find the contributing factor. This paper analyzes the factors influencing Si-C Film Making from the follow aspects ： negative substrate bias, working and sub- strate temperature, working substance, RF power, operation gas pressure, Gr and the time of deposition. Then the growth rules of making SiC film is found.