碳纳米管随机网络场效应晶体管电学性能分析

Research on the Electron Characteristics of Carbon Nanotubes Random Networks Field Effect Transistors

利用电子束蒸发技术在Si衬底形成Au电极作为底栅电极,在底栅电极上生长SiO2薄膜。超声分散CVD法合成的商用单壁碳纳米管(SWCNTs),使用匀胶机将单壁碳纳米管悬浮液均匀旋涂于SiO2薄膜上。再利用荫罩式电子束蒸发技术,在单壁碳纳米管随机网络薄膜表面制备漏源电极。该工艺过程避免了碳纳米管过多的化学接触,有效地保护了碳纳米管的性状。在室温条件下对器件电学性能进行测试和分析。使用该方法制备的单壁碳纳米管随机网络薄膜场效应晶体管,具有器件性能稳定、重复性和一致性较好等优点,并可用于构建碳纳米管逻辑电路。该方法对于研究基于碳纳米管的大规模、低成本的集成电路,具有较高的借鉴价值。

The bottom-gate electrode is deposited on the Si substrate with electron beam evaporation method. Thin film of SiO2 is grown on the bottom-gate electrode. The suspending liquid with single-walled carbon nanotubes （SWCNTs） which are fabricated by the commercial SWCNTs with ultra-sonic and dispersion procedures was spin- coated on the thin film of SiO2. The drain-source electrodes were formed on the thin films of the SWCNTs by shadow mask electron beam evaporation. Too much chemistry contact with the SWCNTs is avoided by using this technology, and the properties of the SWCNTs are preserved effectively. The electricity performance of the CNT-FET device is tested at room temperature. The SWCNTs random networks thin film FETs had the advantages of steady performance, good repeatability and uniformity. This technique can be used for constructing logic circuits in CNTs, and provide valuable references for making research on large-scale and low-cost ICs based on CNTs.