具有电子传输特性的Be金属配合物作为磷光主体材料的电致发光性能

Electroluminescent Property of a Beryllium Metal-chelate Complex Used as the Electron-transporting Host Material

采用具有优良电子传输特性的铍金属配合物二[2-(2-酚基)吡啶]合铍(Ⅱ)(Bempp)作为磷光客体材料二(2-苯基吡啶)(N,N'-二异丙基苯甲脒)合铱(Ⅲ)(PPP)的主体材料制备磷光电致发光器件.与经典的空穴传输型主体材料4,4'-二(N-咔唑)联苯(CBP)相比,Bempp更有利于空穴、电子的注入及传输的平衡,与PPP间存在更高效的能量转移.该器件的各项性能指标,包括最大效率和流明效率(63.1 cd/A和54.0lm/W),均明显高于采用CBP作为主体材料的磷光器件.

A simple and highly efficient single-emitting-layer phosphorescent organic light-emitting diode （PHOLED） that used bis [ 2- （ 2-hydroxyphenyl ） 4-methyl-pyridine ] beryllium （Bempp） as the electron-transporting host material and bis （ pyridylphenyl ） iridium （III ） （ N, N＇-diisopropyl-benzamidine ） （PPP） as the phosphorescent dye to enhance the electro-luminescence （EL） performance was presented. This PHOLED device exhibited substantially lower driving voltage （2. 5 V） and higher EL efficiencies than those based on the CBP host. It showed dramatically enhanced peak values of more than 63.1 cd/A for luminous efficiency, 54. 0 lm/W for power efficiency. The high EL performance was attributed to the well-matched energy levels of Bempp with the hole/electron-transporting （HT/ET） materials as well as the highly efficient and complete energy transfer between the host and the guest. The results demonstrate that Bempp is a promising host material to replace the commonly used CBP because of its higher EL efficiency and its relative high triplet energy （ca. 2.6 eV）.