摘要
Ag/ZnO/Zn/Pt structure resistive switching devices are prepared by radio frequency magnetron sputtering. The ZnO thin films are grown at room temperature and 400 ℃ substrate temperature, respectively. By comparing the data, we find that the latter device displayed better stability in the repetitive switching cycle test, and the resistance ratio between a high resistance state and a low resistance state is correspondingly increased. After 104-s storage time measurement, this device exhibits a good retention property. Moreover, the operation voltages are very low： -0.3 V/-0.7 V （OFF state） and 0.3 V （ON state）. A high-voltage forming process in the initial state is not required, and a multistep reset process is demonstrated.
Ag/ZnO/Zn/Pt structure resistive switching devices are prepared by radio frequency magnetron sputtering. The ZnO thin films are grown at room temperature and 400 ℃ substrate temperature, respectively. By comparing the data, we find that the latter device displayed better stability in the repetitive switching cycle test, and the resistance ratio between a high resistance state and a low resistance state is correspondingly increased. After 104-s storage time measurement, this device exhibits a good retention property. Moreover, the operation voltages are very low： -0.3 V/-0.7 V （OFF state） and 0.3 V （ON state）. A high-voltage forming process in the initial state is not required, and a multistep reset process is demonstrated.
基金
Project supported by the National Natural Science Foundation of China (Grant No. 50972007)
the National Natural Science Foundation of China for Distinguished Young Scholars (Grant No. 60825407)
the Beijing Municipal Natural Science Foundation,China (Grant No. 4092035)
the State Key Program for Basic Research of the Ministry of Science and Technology of China (Grant No. 2011CB932703)
the Special Items Fund of Beijing Municipal Commission of Education,China
the Opened Fund of the State Key Laboratory on Integrated Optoelectronics,China
