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Chin. Phys. B Vol. 21. No. 6 (2012) 066301

Chin. Phys. B Vol. 21. No. 6 (2012) 066301
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摘要 [BO4]^-1+4SIO2 → [BSi4O1o]^-1 + 02, 2BaC03+SiO2→Ba2SiO4+2C02. The relatively higher temperature that is suffi-cient to melt the mixture was chosen to be 1100 ℃. 510 ℃ was determined as the annealing temperature to exclude stress and air bubbles. [BO4]^-1+4SIO2 → [BSi4O1o]^-1 + 02, 2BaC03+SiO2→Ba2SiO4+2C02. The relatively higher temperature that is suffi-cient to melt the mixture was chosen to be 1100 ℃. 510 ℃ was determined as the annealing temperature to exclude stress and air bubbles.
出处 《Chinese Physics B》 SCIE EI CAS CSCD 2012年第6期394-398,共5页 中国物理B(英文版)
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