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The properties of transparent conducting molybdenum-doped ZnO films grown by radio frequency magnetron sputtering 被引量:2

The properties of transparent conducting molybdenum-doped ZnO films grown by radio frequency magnetron sputtering
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摘要 Transparent conducting molybdenum-doped zinc oxide films are prepared by radio frequency(RF) magnetron sputtering at ambient temperature.The MoO3 content in the target varies from 0 to 5 wt%,and each film is polycrystalline with a hexagonal structure and a preferred orientation along the c axis.The resistivity first decreases and then increases with the increase in MoO3 content.The lowest resistivity achieved is 9.2 × 10^-4.cm,with a high Hall mobility of 30 cm^2.V-1.s-1 and a carrier concentration of 2.3×10^20 cm^-3 at an MoO3 content of 2 wt%.The average transmittance in the visible range is reduced from 91% to 80% with the increase in the MoO3 content in the target. Transparent conducting molybdenum-doped zinc oxide films are prepared by radio frequency(RF) magnetron sputtering at ambient temperature.The MoO3 content in the target varies from 0 to 5 wt%,and each film is polycrystalline with a hexagonal structure and a preferred orientation along the c axis.The resistivity first decreases and then increases with the increase in MoO3 content.The lowest resistivity achieved is 9.2 × 10^-4.cm,with a high Hall mobility of 30 cm^2.V-1.s-1 and a carrier concentration of 2.3×10^20 cm^-3 at an MoO3 content of 2 wt%.The average transmittance in the visible range is reduced from 91% to 80% with the increase in the MoO3 content in the target.
出处 《Chinese Physics B》 SCIE EI CAS CSCD 2012年第6期409-412,共4页 中国物理B(英文版)
基金 Project supported by the Science Foundation of the Education Commission of Shandong Province,China (Grant No. J10LA04)
关键词 molybdenum oxide zinc oxide magnetron sputtering transparent conducting oxides molybdenum oxide, zinc oxide, magnetron sputtering, transparent conducting oxides
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