期刊文献+

Improved performance of organic light-emitting diodes with dual electron transporting layers 被引量:1

Improved performance of organic light-emitting diodes with dual electron transporting layers
下载PDF
导出
摘要 In this study the performance of organic light-emitting diodes (OLEDs) are enhanced significantly, which is based on dual electron transporting layers (13phen/CuPc). By adjusting the thicknesses of Bphen and CuPc, the maximal luminescence, the maximal current efficiency, and the maximal power efficiency of the device reach 17570 cd/m^2 at 11 V, and 5.39 cd/A and 3.39 lm/W at 3.37 mA/cm^2 respectively, which are enhanced approximately by 33.4%, 39.3%, and 68.9%, respectively, compared with those of the device using Bphen only for an electron transporting layer. These results may provide some valuable references for improving the electron injection and the transportation of OLED. In this study the performance of organic light-emitting diodes (OLEDs) are enhanced significantly, which is based on dual electron transporting layers (13phen/CuPc). By adjusting the thicknesses of Bphen and CuPc, the maximal luminescence, the maximal current efficiency, and the maximal power efficiency of the device reach 17570 cd/m^2 at 11 V, and 5.39 cd/A and 3.39 lm/W at 3.37 mA/cm^2 respectively, which are enhanced approximately by 33.4%, 39.3%, and 68.9%, respectively, compared with those of the device using Bphen only for an electron transporting layer. These results may provide some valuable references for improving the electron injection and the transportation of OLED.
出处 《Chinese Physics B》 SCIE EI CAS CSCD 2012年第6期448-450,共3页 中国物理B(英文版)
基金 Project supported by the National Natural Science Foundation of China (Grant Nos. 60906022 and 60876046) the Tianjin Natural Science Foundation of China (Grant No. 10JCYBJC01100)
关键词 organic light-emitting diodes dual electron transporting layers CUPC organic light-emitting diodes, dual electron transporting layers, CuPc
  • 相关文献

参考文献12

  • 1Wang X P, Mi B X, Gao Z Q, Guo Q and Huang W 2011 Acta Phys. Sin. 60 087808 (in Chinese).
  • 2Park G Y and Ha Y 2008 Synth. Met. 158 20.
  • 3Lee Y, Kim J Kwon St Min C K Yi Y Kim J W Koo B and Hong M 2008 Org. Electron. 9 407.
  • 4Banga H S, Chooa D C, Kima T W, Parkb J H, Seob J H and KimbMol Y K 2009 Cryst. Liq. Cryst. 498 265.
  • 5Zhong J, Gao Z, Yu J S and Jiang Y D 2011 Opt. Rev. 18 34.
  • 6Gao L Y, Zhao S L, Xu Z, Zhang F J, Sun Q J, Zhang T H, Yan G and Xu X R 2011 Acta Phys. Sin. 60 037203 (in Chinese).
  • 7Parthasarathy G, Burrows P E, Khalfin V, Kozlov V G and Forrest S R 1998 Appl. Phys. Left. 72 2138.
  • 8Hung L S, Liao L S, Lee C S and Lee S T 1999 J. Appl. Phys. 86 4607.
  • 9Hung L S 2001 Appl. Phys. Lett. 78 3732.
  • 10Liu T H, Shen W J, Yen C K, Iou C Y, Chen H H, Banu- mathy B and Chen C H 2003 Synth. Met. 137 1033.

同被引文献2

引证文献1

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部