摘要
Undoped and V-doped 6H-SiC single crystals have been grown by the physical vapor transport method.The V concentration is determined to be 3.76×10^17 at/cm^3 and 6.14×10^17 at/cm^3 by secondary ion mass spectrometry for low V-doped and high V-doped SiC samples,respectively.The undoped 6H-SiC shows diamagnetism,while the V-doped 6H-SiC exhibits weak ferromagnetism.The lower V-doped sample shows stronger ferromagnetism compared to that of the higher V-doped sample.However,the structural characterization indicates that the lower V-doped SiC has a relative poor crystalline quality.It is found that both V dopants and defects are essential for introducing ferromagnetic exchange in V-doped SiC single crystals.
Undoped and V-doped 6H-SiC single crystals have been grown by the physical vapor transport method.The V concentration is determined to be 3.76×10^17 at/cm^3 and 6.14×10^17 at/cm^3 by secondary ion mass spectrometry for low V-doped and high V-doped SiC samples,respectively.The undoped 6H-SiC shows diamagnetism,while the V-doped 6H-SiC exhibits weak ferromagnetism.The lower V-doped sample shows stronger ferromagnetism compared to that of the higher V-doped sample.However,the structural characterization indicates that the lower V-doped SiC has a relative poor crystalline quality.It is found that both V dopants and defects are essential for introducing ferromagnetic exchange in V-doped SiC single crystals.
基金
Project supported by the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 51002176)
the Innovation Programs of the Chinese Academy of Sciences (Grant No. KJCX2-EW-W10)
