摘要
After post-silicidation annealing at various temperatures for 30 min, abnormal oxidation and agglomeration in nickel silicide and nickel germanosilicide are investigated under different conditions of NiSi, with As-, In-, and Sb-doped Si substrates of nickel germanosilicide without any dopants. The NiSi thickness, dopant species, doping concentration, and silicide process conditions are dominant factors for abnormal oxidation and NiSi agglomeration. Larger dopants than Si, thinner NiSi thickness and SiGe suhstrates, and higher dopant concentrations promote abnormal oxidation and agglomeration.
After post-silicidation annealing at various temperatures for 30 min, abnormal oxidation and agglomeration in nickel silicide and nickel germanosilicide are investigated under different conditions of NiSi, with As-, In-, and Sb-doped Si substrates of nickel germanosilicide without any dopants. The NiSi thickness, dopant species, doping concentration, and silicide process conditions are dominant factors for abnormal oxidation and NiSi agglomeration. Larger dopants than Si, thinner NiSi thickness and SiGe suhstrates, and higher dopant concentrations promote abnormal oxidation and agglomeration.
基金
Project supported by the National Natural Science Foundation of China (Grant No. 61176101)
the "Zijing Program Foundation"of Zhejiang University
the Natural Science Foundation of Zhejiang Province for Oversea Returners
