摘要
硅基(SOI)波导是近年集成光电子和集成波导的重要方向。对硅基纳米波导进行数值计算,讨论了空气包层和SiO2包层两种情况的双模传输特性,得到两种包层结构的双模工作区域和双模拍长与波导结构的关系。研究了SOI纳米波导中双模干涉现象以及双折射和温度对双模干涉的影响。
The cutoff properties of some lower-order modes of some nano silicon-on-insulator (SOI) waveguides with air cladding or Si02 cladding are analyzed. Operation regimes of no mode, single mode, and :wo modes are obtained and demonstrated by using the cutoff wavelength and the waveguide width. The beat length, between the two modes with the same polarization in the two-mode regime, are shown as a function of the waveguide parameters. Two-mode interference and the effects of the birefringence as well as the temperature are discussed to show the potential applications of the SOI waveguides.
出处
《中国激光》
EI
CAS
CSCD
北大核心
2012年第7期135-140,共6页
Chinese Journal of Lasers
基金
国家自然科学基金(61077048)
北京市自然科学基金(4092031)
基本科研业务费(2009JBM103)资助课题
关键词
光电子学
硅基波导
模式截止
双模干涉
拍长
optoelectronics silicon-on-insulator waveguides mode cutoff two mode interference beat length