摘要
为研究大功率晶体管的结构和工作原理,提出设计参数指标为集电极最大允许耗散功率P=50 W。采用梳状结构,利用近似方法结合各项工艺条件经过综合分析,计算出大功率晶体管的发射结和集电结面积、发射极总周长、发射极与基极间距、发射极金属电极条长和宽、晶片面积等横向结构参数,为大功率晶体管的结构设计和应用提供了数据支撑。计算方法通过实验验证,适用于更大功率晶体管的参数分析和计算。
Structure and working principle of the study of high-power transistors, design parameters of collector maximum allowable power dissipation P = 50 W are proposed. Comb structure, approximation method are combined to the various process conditions after a comprehensive analysis, The power transistor emitter junction and collector junction area are calculated. Launching extremely total circumference of the emitter-base spacing, extremely metal electrode bar length and width, chip area, and other horizontal structural parameters are launched. Data support for the structural design and application of high-power transistors is provided. The calculation method by experiment are verified, the parameter analysis and calculation of the higher power transistor are verified.
出处
《科学技术与工程》
北大核心
2012年第20期5027-5030,共4页
Science Technology and Engineering
基金
贵州省重点支持学科(黔教高发〔2011〕275号)资助
关键词
大功率晶体管
横向结构参数
半导体技术
设计
分析
High--power transistor horizontal structure parameters semiconductor technology design analysis
