摘要
选取了TGS晶体的 (0 0 1) ,(110 ) ,(0 10 )和 (10 0 )四个面为研究对象 ,分析讨论了TGS晶体的表面扩散螺位错生长机制 ,发现生长基元的脱水化进入表面层过程与表面扩散过程相比 ,前者在TGS晶体的生长过程中起着更重要的作用 ;同时 ,在较高的相对过饱和度下 ,观察到了TGS自然结晶体的两种简单晶形 .
Four faces of TGS crystal were chosen to study the growth kinetics. BCF spiral growth mechanism for the surface diffusion model was analyzed using the kinetic data of the four faces. We found it is more important that the growth units enter the surface layer to grow after overcoming the dehydration activation energy, than the process of surface diffusion. Two simple crystal forms of TGS spontaneous nucleation crystals were also observed.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2000年第9期1873-1877,共5页
Acta Physica Sinica
基金
国家自然科学基金!(批准号 :5 983 2 0 80 (重点项目 )和 5 982 3 0 0 3 )&&
